Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

Table 2

Void-free trench filling with reaction rate 𝐹(𝑦) defined by (3.2) for 𝑑=𝑘𝑤 and 𝑤=20.

𝑘	Aspect ratio	𝐹	Plating time
	𝑘 : 1		𝑡
2	2 : 1	2.0	130
3	3 : 1	1.0	300
4	4 : 1	0.5	560