Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon

Table 1

Parameters of single-crystal silicon.

Type	P-type single-crystal silicon	Method of growth	CZ
Crystal orientation	<111>	Doping type	Phosphorus doped
Melting point	1410°C	Resistivity	0.5 Ω cm
Density	2.33 g/cm³	Boiling point	2355°C