Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon

Table 3

Processing parameters.

Processing parameters	Parameter value
Voltage, U (V)	100
Pulse width, Ton (μs)	100
Pulse interval, Tof (μs)	400
First-stage feeding rate of the copper foil electrode, (mm)	0.2
Second-stage feeding rate of the copper foil electrode, (μm)	120