Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Figure 1

The displacement as a function of (x) with a change of rotation and photothermal and its prediction. (a) The real part of the horizontal displacement component as a function of distance . (b) The imaginary part of the horizontal displacement component as a function of distance . (c) The prediction of the real part of the horizontal displacement component using ANN. The maximum predicted value is a range of between 0.14741 and 0.26007. (d) The prediction of the imaginary part of the horizontal displacement component using ANN. The maximum predicted value is a range of between 0.17847 and 0.17941. (e) The prediction of the real part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.14741 and 0.2600. This is a common misunderstanding. (f) The prediction of the imaginary part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.17847 and 0.17941.

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