Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Figure 2

The displacement as a function of (x) with a change of rotation and photothermal. (a) The real part of the horizontal displacement component v as a function of distance . (b) The imaginary part of the horizontal displacement component as a function of distance . (c) The prediction of the real part of the horizontal displacement component using ANN. The maximum predicted value is a range of between 0.023833 and 0.0.040835. (d) The prediction of the imaginary part of the horizontal displacement component using ANN. The maximum predicted value is a range of between 0.05831 and 0.006057. (e) The prediction of the real part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.02445 and 0.09983. (f) The prediction of the imaginary part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.00730 and 0.00949.

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