Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Figure 3

The concentration as a function of (x) with a change of rotation and photothermal effect. (a) The real part of the horizontal displacement component as a function distance . (b) The imaginary part of the horizontal displacement component as a function of distance . (c) The prediction of the real part of the horizontal displacement component using ANN is made. The maximum predicted value is a range of between 0.06683 and 0.18141. (d) The prediction of the imaginary part of the horizontal displacement component using ANN is made. The maximum predicted value is a range of between 0.498232 and 0.97550. (e) The prediction of the real part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.00161 and 0.00905. (f) The prediction of the imaginary part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.10853 and 0.44991.

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