Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Figure 4

The normal stress as a function of (x) with a change of rotation and photothermal. (a) The real part of the horizontal displacement component as a function of distance (x). (b) The imaginary part of the horizontal displacement component as a function of distance (x). (c) The prediction of the real part of the horizontal displacement component using ANN is made. The maximum predicted value is a range of between 0.00 and 0.1. (d) The prediction of the imaginary part of the horizontal displacement component using ANN. The maximum predicted value is a range of between 0.1 and 0.00. (e) The prediction of the real part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.086678 and 0.12471. (f) The prediction of the imaginary part of the horizontal displacement component using cubic spline is made. The maximum predicted value is a range of between 0.05675 and 0.03448.

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