Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Figure 6

The temperature T as a function of (x) with a change of rotation and photothermal. (a) The real part of the horizontal displacement component T as a function of distance (x). (b) The imaginary part of the horizontal displacement component T as a function of distance (x). (c) The prediction of the real part of the horizontal displacement component T using ANN. The maximum predicted value is a range of between −0.00003 and 0.00002. (d) The prediction of the imaginary part of the horizontal displacement component T using ANN. The maximum predicted value is a range of between 0.00014 and 0.00032. (e) The prediction of the real part of the horizontal displacement component T using cubic spline is made. The maximum predicted value is a range of between −0.00003 and 0.00002. (f) The prediction of the imaginary part of the horizontal displacement component T using cubic spline is made. The maximum predicted value is a range of between 0.00014 and 0.00032.

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