Research Article
Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time
Figure 7
The component N as a function of (x) with a change of rotation and photothermal. (a) The real part of the horizontal displacement component N as a function of distance (x). (b) The imaginary part of the horizontal displacement component N as a function of distance (x). (c) The prediction of the real part of the horizontal displacement component N using ANN. The maximum predicted value is predicted to range between −0.02 and 1.49. (d) The prediction of the imaginary part of the horizontal displacement component N using ANN is made. The maximum predicted value is a range of between 0.01 and 0.07. (e) The prediction of the real part of the horizontal displacement component N using cubic spline is made. The maximum predicted value is range of between 0.01818 and 0.09107. (f) The prediction of the imaginary part of the horizontal displacement component N using cubic spline is made. The maximum predicted value ranges between 0.00294 and 0.56346.
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