Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Table 1

The descriptive analysis for the real (Re) and imaginary (Im) displacement u with a change of rotation () under photothermal and nonphotothermal effects.

Re(u)		x	Photothermal	Photothermal	Nonphotothermal	Nonphotothermal
	Mean	2.25	0.0094079	0.01776244	0.01470292	0.02853617
	Variance	1.739	0.002	0.003	0.002	0.005
	Range	4.50	0.1831410	0.22500100	0.21975800	0.28189700
	Minimum	0.00	−0.015641	−0.0141010	−0.0146480	−0.0115470
	Maximum	4.50	0.1675000	0.21090000	0.20511000	0.27035000
	Correlation between x and real displacement	1	−0.556	−0.636	−0.603	−0.689
Im(u)	Mean	2.25	0.0368109	0.043777355	0.040318147	0.045819144
	Variance	1.739	0.003	0.003	0.003	0.003
	Range	4.50	0.1615536	0.175819850	0.162007650	0.157121090
	Minimum	0.00	−0.000764	−0.00057985	−0.00063765	−0.00040109
	Maximum	4.50	0.1607900	0.175240000	0.161370000	0.156720000
	Correlation between x and imaginary displacement	1	−0.868	−0.888	−0.882	−0.910