Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Table 10

The accuracy measurements for cubic spline models of the real (Re) parts of the horizontal displacement components.

		(photothermal)	(photothermal)	(nonphotothermal)	(nonphotothermal)
Re (u)	SMAPE	3.70E − 05	4.55E − 05	4.44E − 05	5.69E − 05
	MSE	1.692083	1.243457	1.516614	1.003554
	MAPE	2.945043	2.398402	2.689989	2.078128
Re ( )	SMAPE	1.24E − 05	1.55E − 05	1.42E − 05	1.89E − 05
	MASE	0.042052	0.043678	0.041679	0.042014
	MAPE	0.016568	0.01723	0.019774	0.01527
Re ()	SMAPE	5.60E − 05	4.35E − 05	7.22E − 05	6.78E − 05
	MSE	4.234544	2.558047	4.011901	2.010292
	MAPE	0.61733	0.216873	2.520706	0.973477
Re ()	SMAPE	0.000168	0.000168	0.000184	0.000184
	MASE	7.840674759	8.579709759	2.3422	8.643227637
	MAPE	0.570035	6.393111	0.443825	0.627785
Re ()	SMAPE	2.02E − 05	2.63E − 05	2.22E − 05	2.62626E − 05
	MASE	6.792489	5.163040385	6.009885	4.721728846
	MAPE	0.570035	6.393111	0.443825	0.627785
Re (T)	SMAPE	5.14444E − 07	6.60626E − 07	2.69919E − 08	1.82626E − 08
	MASE	0.768075162	0.796385233	1.18769991	1.776765265
	MAPE	2.3422	1.220759	0.295952	0.289676
Re (N)	SMAPE	4.46909E − 06	5.70869E − 06	0.000555172	0.000555172
	MASE	0.628370525	0.648182338	1.000920333	1.000920333
	MAPE	0.628370525	0.074526	0.308779	0.308779