Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Table 2

The descriptive analysis for the real (Re) and imaginary (Im) displacements with a change of rotation () under photothermal and nonphotothermal effects.

Re()		x	Photothermal	Photothermal	Nonphotothermal	Nonphotothermal
	Mean	2.25	0.007065	0.0116585	0.0083392	0.0126411
	Variance	1.739	0.000	0.000	0.000	0.000
	Range	4.50	0.074528	0.0907260	0.0816480	0.1001720
	Minimum	0.00	−0.04229	−0.0441300	−0.0455750	−0.0506870
	Maximum	4.50	0.032241	0.0465960	0.0360730	0.0494850
	Correlation between x and real displacement	1	−0.392	−0.486	−0.384	−0.412
Im(v)	Mean	2.25	0.000488	−0.0039748	−0.0005080	−0.0071368
	Variance	1.739	0.000	0.000	0.000	0.000
	Range	4.50	0.034140	0.05947300	0.03982500	0.06887100
	Minimum	0.00	−0.02338	−0.0474430	−0.0283140	−0.0581960
	Maximum	4.50	0.010757	0.01203000	0.01151100	0.01067500
	Correlation between x and imaginary displacement	1	0.432	0.615	0.487	0.673