Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Table 4

The descriptive analysis for the real (Re) and imaginary (Im) displacement with a change of rotation () under photothermal and nonphotothermal effects.

		x	Photothermal	Photothermal	Nonphotothermal	Nonphotothermal
Re ()	Mean	2.25	−0.085877	−0.10799	−0.0746369	−0.0446341
	Variance	1.739	0.006	0.005	0.008	0.006
	Range	4.50	0.2770570	0.2019830	0.35750000	0.33548000
	Minimum	0.00	−0.218040	−0.215190	−0.2290000	−0.1433000
	Maximum	4.50	0.0590170	−0.013207	0.12850000	0.19218000
	Correlation between x and real displacement	1	0.540	0.702	0.419	−0.023
	Mean	2.25	0.0384065	0.0242073	0.20034139	0.22243681
Im ()	Variance	1.739	0.025	0.014	0.096	0.093
	Range	4.50	0.560227	0.43722200	0.97499250	0.95549380
	Minimum	0.00	−0.07915	−0.0646920	−0.0055625	−0.0039838
	Maximum	4.50	0.481080	0.37253000	0.96943000	0.95151000
	Correlation between x and imaginary displacement	1	−0.638	−0.634	−0.830	−0.872