Research Article
Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time
Table 5
The descriptive analysis for the real (Re) and imaginary (Im) displacement
with a change of rotation (
) under photothermal and without photothermal.
| | | x | (photothermal) | (photothermal) | (nonphotothermal) | (nonphotothermal) |
| Re () | Mean | 2.25 | −0.085877 | −0.10799 | −0.0746369 | −0.0446341 | Variance | 1.739 | 0.006 | 0.005 | 0.008 | 0.006 | Range | 4.50 | 0.2770570 | 0.2019830 | 0.35750000 | 0.33548000 | Minimum | 0.00 | −0.218040 | −0.215190 | −0.2290000 | −0.1433000 | Maximum | 4.50 | 0.0590170 | −0.013207 | 0.12850000 | 0.19218000 | Correlation between x and real displacement | 1 | 0.540 | 0.702 | 0.419 | −0.023 | Mean | 2.25 | 0.0384065 | 0.0242073 | 0.20034139 | 0.22243681 | Im () | Variance | 1.739 | 0.025 | 0.014 | 0.096 | 0.093 | Range | 4.50 | 0.560227 | 0.43722200 | 0.97499250 | 0.95549380 | Minimum | 0.00 | −0.07915 | −0.0646920 | −0.0055625 | −0.0039838 | Maximum | 4.50 | 0.481080 | 0.37253000 | 0.96943000 | 0.95151000 | Correlation between x and imaginary displacement | 1 | −0.638 | −0.634 | −0.830 | −0.872 | | | | | | |
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