Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Table 7

The descriptive analysis for the real (Re) and imaginary (Im) displacements N with a change of rotation () under photothermal and nonphotothermal effects.

		x	(photothermal)	(photothermal)	(nonphotothermal)	(nonphotothermal)
Re (N)	Mean	2.25	0.01	0.0126	−0.0241	−0.2016
	Variance	1.739	0.00	0.0000	0.375	0.230
	Range	4.50	0.02	0.0300	2.750	2.310
	Minimum	0.00	0.00	0.0000	−0.450	−0.610
	Maximum	4.50	0.02	0.0300	2.3000	1.700
	Correlation between x and real displacement	1	− 0.984	− 0.983	− 0.586	− 0.390
Im (N)	Mean	2.25	0.0010	−0.0011	−1.0760	−1.1098
	Variance	1.739	0.0000	0.000	1.485	1.8110
	Range	4.50	0.0100	0.000	4.140	4.6800
	Minimum	0.00	0.000	0.000	−4.110	−4.6300
	Maximum	4.50	0.000	0.000	0.030	0.05
	Correlation between x and imaginary displacement	1	−0.932	− 0.746	0.922	0.907