Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Table 8

The accuracy measurements for ANN models of the real (Re) parts of the horizontal displacement components.

		(photothermal)	(photothermal)	(nonphotothermal)	(nonphotothermal)
Re (u)	SMAPE	3.70E − 05	4.55E − 05	4.44E − 05	5.69E − 05
	MASE	0.635481	0.466403	0.350134	0.629209
	MAPE	0.53299	0.437449	0.312106	0.383288
Re ()	SMAPE	0.12066	0.11264	0.11434	0.36563
	MASE	0.68705323	0.41762399	0.40712303	0.944657
	MAPE	0.308549824	0.377133715	0.48351935	0.878681207
Re ()	SMAPE	0.052713	0.2138	0.316077	0.244785
	MASE	0.712449	4.017415	2.957728	7.352439
	MAPE	0.090821	0.577089	0.55439	0.689852
Re ()	SMAPE	0.000168	0.000267	0.000184	0.000207
	MASE	0.071566265	0.465	0.282857143	0.246292683
	MAPE	2.3422	2.3422	2.3422	2.3422
Re ()	SMAPE	2.02E − 05	2.63E − 05	2.22E − 05	2.63E − 05
	MASE	0.693	0.342692308	0.18	0.875769231
	MAPE	0.570035	6.393111	0.443825	0.627785
Re (T)	SMAPE	5.14444E − 07	6.60626E − 07	2.69919E − 08	1.82626E − 08
	MASE	0.19489813	0.202480355	0.391027401	0.666676842
	MAPE	2.3422	2.3422	2.3422	2.3422
Re (N)	SMAPE	4.46909E − 06	5.70869E − 06	0.000555172	0.000466313
	MASE	0.743446859	0.803513872	0.791950641	0.849342995
	MAPE	0.047424	0.042173	0.1717830.171783	0.162719