Machine Learning and Statistical Methods for Studying Voids and Photothermal Effects of a Semiconductor Rotational Medium with Thermal Relaxation Time

Table 9

The accuracy measurements for ANN models of the imaginary (Im) parts of the horizontal displacement components.

		(photothermal)	(photothermal)	(nonphotothermal)	(nonphotothermal)
Im (u)	SMAPE	0.1814	0.1641	0.1509	0.2530
	MSE	1.1728	0.8792	0.6575	1.2108
	MAPE	0.5330	0.4374	0.3121	0.3833
Im ( )	SMAPE	0.12312	0.152	0.16672	0.10719
	MASE	1.92028225	1.91250976	1.99700485	1.84391622
	MAPE	0.345878506	0.420277345	0.595457178	0.265812308
Im ()	SMAPE	0.0851	0.1459	0.1866	0.2026
	MASE	0.6858	1.4009	0.5909	0.7221
	MAPE	0.2210	0.5610	0.6305	0.8968
Im ()	SMAPE	7.58E − 05	5.45E − 05	5.66E − 05	4.65E − 05
	MASE	0.4092	0.366666667	0.424285714	0.365869565
	MAPE	0.361733	0.221326	0.27026	1.197851
Im ()	SMAPE	2.22E − 05	3.43E − 05	2.63E − 05	4.04E − 05
	MASE	1.485	1.339411	1.446923077	1.485
	MAPE	2.839228	0.988999	1.223858	1.917065
Im (T)	SMAPE	1.72414E − 07	1.19812E − 07	5.64606E − 08	5.96303E − 08
	MASE	0.691406975	0.987060231	0.361210611	0.446970393
	MAPE	0.345878506	0.420277345	0.595457178	0.265812308
Im (N)	SMAPE	1.14684E − 06	6.28596E − 07	0.000837008	0.00094504
	MASE	0.721911609	1.003318364	0.406617291	0.520677279
	MAPE	0.090821	0.06533	0.423038	4.207863