Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET

Table 3

Comparison of different characteristic of FET technology.

FET technology	Drain current (mA)	Threshold voltage (V)	Minimum subthreshold slope	Off current (A)	Transconductance (μS)	DIBL
NC-FinFET with HZO	1.2 mA	0.3 V	60 mV/dec		40μS	35.3 mV/V
FinFET with HfO2	0.5 mA	0.67 V	61 mV/dec		10μS	54.4 mV/V
FinFET with Al2O3 dielectric	0.15 mA	1.8 V	70 mV/dec		0.1μS	67.8 mV/V
FinFET with dielectric [54]	0.073 mA	0.128 V	72.7 mV/dec		—	30 mV/V
Hetero-junction Si1-xGex FinFET [55]	—	—	52.67 mV/dec		—	52.37 mV/V
Bulk MOSFET [56]	—	—	88 mV/dec		—	—
SOI MOSFET [56]	—	—	65 mV/dec	50 μA/μm	—	150 mV/V