Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

<div>Drain current of the TG-MOSFET and the NITG-MOSFET at the SEB threshold voltage after the ion strike [<a href="/journals/stni/2024/3616902/#B52">52</a>].</div>

Science and Technology of Nuclear Installations

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Figure 14

Figure 14: Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices 