Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices

Figure 6

characteristics before irradiation and after 20, 100, 200 and 1000 krad (SiO₂) of TID for device [24]. (a) W = 200 um, L = 0.9 um,  = 0.1 V, . (b) W = 200 um, L = 1.5 um,  = 0.1 V,  =  = 0 V. (c) W = 200 um, L = 0.9 um,  = 1 V,  = = 0 V. (d) W = 200 um, L = 1.5 um,  = 1 V,  =  = 0 V.

(a)

(b)

(c)

(d)