Research Article

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

Figure 7

(a) Effect of HF concentration on the etch rate of oxides. (b) Etch rate versus time in different HF concentration for the oxide films grown at 8 mA/cm2 current density and 0.7 vol% of water.
106029.fig.007a
(a)
106029.fig.007b
(b)