Research Article
A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior
| Device parameters | Optimized values |
| Source doping profile | 1 × 1020 cm−3 (P++) | Drain doping profile | 1 × 1018 cm−3 (N++) | Body doping profile | 1 × 1014 cm−3 (N−) | Body thickness (TSi) | 5 nm | Gate length (LG) | 30 nm | Source length (LS) | 30 nm | Drain length (LD) | 30 nm | Gate dielectric thickness (TGD) | 3 nm | Work function of Gate 1 | 4.05 eV–4.11 eV | Work function of Gate 2 | 4.05 eV–4.11 eV | Work function of Gate 3 | 4.05 eV–4.11 eV |
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