An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure

Table 2

Extracted results for intrinsic capacitances under pinch-off bias condition.

Gate length (μm)	Im Y11/ω (fF)	Im Y22/ω (fF)
10	127.7	95.2
20	178.6	200.5
30	338.8	228.5
40	498.2	312.4
60	619.4	407.3