Research Article

An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure

Table 3

Results of intrinsic parameter extraction, bias:  V and  V.

ParametersUnitsValues

nS9.113
CgsfF94.362
RiΩ1.139
CgdΩ15.454
CdsΩ59.896
Rds4.982